Publications associées à High-Temperature HEMT Mode

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Piezoelectric Properties of BiFeO3 Exposed to High Temperatures

Dragan Damjanovic, Xiaolong Li

BiFeO3 is a ferroelectric with a Curie temperature of 830 C-degrees, however, its piezoelectric performance at high temperature remains unclear. The current work reveals a disappearance/recovery of piezoelectricity in BiFeO3 at elevated temperature and upo ...

Wiley-V C H Verlag Gmbh2024

Molecular intercalation in the van der Waals antiferromagnets FePS3 and NiPS3

Bruce Normand, Xiaoyu Xu, Sheng Xu, Ying Chen, Zeyu Wang, Shuo Li, Weiqiang Yu

We have performed electrochemical treatment of the van der Waals antiferromagnetic materials FePS3 and NiPS3 with the ionic liquid EMIM-BF4, achieving significant molecular intercalation. Mass analysis of the intercalated compounds, EMIMx-FePS3 and EMIMx-N ...

Amer Physical Soc2024

Thermoelectric power of overdoped Tl2201 crystals: charge density waves and T1 and T2 resistivities

Matthias Carsten Putzke

We report measurements of the in-plane thermoelectric power (TEP) for an overdoped (OD) crystal of the single layer cuprate superconductor Tl2Ba2CuO6+x (Tl2201) at several hole concentrations (p), from 300 or 400 K to below the superconducting transition t ...

Iop Publishing Ltd2024

Magneto-Thermoelectric Transport in Graphene Quantum Dot with Strong Correlations

Oleksandr Kriuchkov

Disorder at etched edges of graphene quantum dots (GQD) enables random all-to-all interactions between localized charges in partially filled Landau levels, providing a potential platform to realize the Sachdev-Ye-Kitaev (SYK) model. We use quantum Hall edg ...

2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Shaped Laser Pulses for Microsecond Time-Resolved Cryo-EM: Outrunning Crystallization during Flash Melting

Marcel Drabbels, Ulrich Lorenz, Constantin Richard Krüger, Nathan Junior Mowry

Water vitrifies if cooled at rates above 3 × 105 K/s. In contrast, when the resulting amorphous ice is flash heated, crystallization occurs even at a more than 10 times higher heating rate, as we have recently shown. This may present an issue for microseco ...

2024

Flash Melting Amorphous Ice

Marcel Drabbels, Ulrich Lorenz, Constantin Richard Krüger, Gabriele Bongiovanni, Nathan Junior Mowry

Water can be vitrified if it is cooled at high rates, which makes it possible to outrun crystallization in so-called no man’s land, a range of deeply supercooled temperatures where water crystallizes rapidly. Here, we study the reverse process in pure wate ...

2024

Room-temperature quantum optomechanics using an ultralow noise cavity

Tobias Kippenberg, Nils Johan Engelsen, Alberto Beccari, Guanhao Huang

At room temperature, mechanical motion driven by the quantum backaction of light has been observed only in pioneering experiments in which an optical restoring force controls the oscillator stiffness1,2. For solid-state mechanical resonators in which oscil ...

Nature Portfolio2024

Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Christophe Marcel Georges Galland, Sakthi Priya Amirtharaj, Wen Chen, Konstantin Malchow

Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical functionalities o ...

Amer Chemical Soc2024

Ultrahigh-quality-factor micro- and nanomechanical resonators using dissipation dilution

Tobias Kippenberg, Nils Johan Engelsen, Alberto Beccari

Mechanical resonators are widely used in sensors, transducers and optomechanical systems, where mechanical dissipation sets the ultimate limit to performance. Over the past 15 years, the quality factors in strained mechanical resonators have increased by f ...

Nature Portfolio2024

Turbulence and Heat exchange in the Near-Surface Boundary Layer over Patchy Snow

Michael Haugeneder

The atmospheric layer adjacent to the earth's surface is of crucial importance for weather models due to the exchange of energy between the surface and the atmosphere. This exchange is dependent on the various surface properties and influences the state of ...

EPFL2024

Single Chip Dynamic Nuclear Polarization Microsystems

Nergiz Sahin Solmaz

Nuclear magnetic resonance (NMR) methods are powerful tools employed in many fields, including physics, chemistry, material science, biology, and medicine. The use of NMR methodologies in an even wider range of applications is often hindered by the relativ ...

EPFL2023

Murunskite - a new class of functional material

Davor Tolj

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023