Publication
Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate threshold to 3.5 V is observed. The small-signal performances are essentially unchanged. The thermal stability of this process has been assessed for the first time and appears to be limited to approximately 500 degrees C.
Paul Joseph Dyson, Fatmah Ebrahim, Kyriakos Stylianou, Andrzej Gladysiak, Serhii Shyshkanov, Ngoc Tú Nguyên, Patrick Favre
Elison de Nazareth Matioli, Jun Ma, Minghua Zhu