Publications associées à Power-gated MOS current mode logic (PG-MCML): a power aware DPA-resistant standard cell library

Contemporary Logic Synthesis: with an Application to AQFP Circuit Optimization

Electronic devices play an irreplaceable role in our lives. With the tightening time to market, exploding demand for computing power, and continuous desire for smaller, faster, less energy-consuming, and lower-cost chips, computer-aided design for electron ...

EPFL2024

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Improving Standard-Cell Design Flow using Factored Form Optimization

Giovanni De Micheli, Alessandro Tempia Calvino

Factored form is a powerful multi-level representation of a Boolean function that readily translates into an implementation of the function in CMOS technology. In particular, the number of literals in a factored form correlates strongly with the number of ...

IEEE2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

RDS: FPGA Routing Delay Sensors for Effective Remote Power Analysis Attacks

Mirjana Stojilovic, Ognjen Glamocanin, David Spielmann

State-of-the-art sensors for measuring FPGA voltage fluctuations are time-to-digital converters (TDCs). They allow detecting voltage fluctuations in the order of a few nanoseconds. The key building component of a TDC is a delay line, typically implemented ...

2023

An All-Digital 1 Mbps, 57 pJ/bit Bluetooth Low Energy (BLE) Backscatter ASIC in 65 nm CMOS

James Daniel Rosenthal

We present an all-digital application specific integrated circuit (ASIC) that implements Bluetooth Low Energy (BLE)-compatible backscatter communication. The ASIC was fabricated in a 65 nm CMOS process and occupies an active area of 0.12 mm(2) while consum ...

IEEE2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

An Energy-Efficient Bridge-to-Digital Converter for Implantable Pressure Monitoring Systems

Marco Mattavelli, Catherine Dehollain, Diego Ruben Barrettino, Franco Maloberti, Kerim Türe, Mustafa Besirli

This paper presents an energy-efficient, duty-cycled, and spinning excitation bridge-to-digital converter (BDC) designed for implantable pressure sensing systems. The circuit provides the measure of the pulmonary artery pressure that is particularly releva ...

2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Shrinking FPGA Static Power via Machine Learning-Based Power Gating and Enhanced Routing

Mirjana Stojilovic, Hossein Asadi, Zeinab Seifoori

Despite FPGAs rapidly evolving to support the requirements of the most demanding emerging applications, their high static power consumption, concentrated within the routing resources, still presents a major hurdle for low-power applications. Augmenting the ...

2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Random flip-flop: adding quantum randomness to digital circuits for improved cyber security, artificial intelligence and more

Claudio Bruschini, Edoardo Charbon, Ivan Michel Antolovic, Mario Stipcevic

Harnessing quantum randomness for the generation of random numbers is an important concept crucial for information security and many other computer-related applications. Quantum random number generators (QRNGs) are evolving from bulky, slow, and expensive ...

SPIE2021

Preserving Self-Duality During Logic Synthesis for Emerging Reconfigurable Nanotechnologies

Giovanni De Micheli, Heinz Riener, Shubham Rai, Akash Kumar

Emerging reconfigurable nanotechnologies allow the implementation of self-dual functions with a fewer number of transistors as compared to traditional CMOS technologies. To achieve better area results for Reconfigurable Field-Effect Transistors (RFET)-base ...

IEEE2021

Three-Input Gates for Logic Synthesis

Giovanni De Micheli, Eleonora Testa, Mathias Soeken, Dewmini Sudara Marakkalage, Heinz Riener

Most logic synthesis algorithms work on graph representations of logic functions with nodes associated with arbitrary logic expressions or simple logic functions and iteratively optimize such graphs. While recent multilevel logic synthesis efforts focused ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Subthermionic negative capacitance ion sensitive field-effect transistor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi

One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...

2020