Publications associées à Piezoresponse force microscopy on doubly clamped KNbO3 nanowires

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an ...

Nature Portfolio2024

Dataset for "Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates"

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the recent publication entitled “Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper ...

Zenodo2023

Tailor-made Piezoelectric Elastomer Materials

Francis Owusu

Recent advancements in miniature devices with higher computational capabilities and ultralow power consumption have accelerated the development of wearable sensors, actuators, and energy harvesters everywhere. The ultimate aim of such a technological revol ...

EPFL2023

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Zhengwen Jiang, Gian Luca Barbruni, Yihe Zhao

Label-free biosensors, combined with miniaturized micro-electromechanical sensory platforms, offer an attractive solution for real-time and facile monitoring of biomolecules due to their high sensitivity and selectivity without the need for specifically la ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

The development of fully solution-processed, biodegradable piezoelectrics is a critical step in the development of green electronics towards the worldwide reduction of harmful electronic waste. However, recent printing processes for piezoelectrics are hind ...

2023

Synthesis of polysiloxane elastomers modified with sulfonyl side groups and their electromechanical response

Holger Frauenrath, Yauhen Sheima

Dielectric elastomer transducers are elastic capacitors that respond to mechanical or electrical stress. They can be used in applications such as millimeter-sized soft robots and harvesters of the energy contained in ocean waves. The dielectric component o ...

Royal Society of Chemistry2023

500 MHz high resolution proximity sensors with fully integrated digital counter

Giovanni Boero, Nergiz Sahin Solmaz, Reza Farsi

We report on the design and characterization of two inductive proximity sensors based on LC oscillators operating at 500 MHz. The distance from the target is obtained by measuring the oscillation frequency variation. Both sensors contain an off-chip LC res ...

ELSEVIER SCI LTD2023

Nonlinear electro-mechanical coupling and thermally stimulated currents in relaxor ferroelectrics

Lukas Riemer

In this work, the emergence of polarization and electro-mechanical coupling in Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3 â PbTiO3 was investigated by means of thermally stimulated current, and nonlinear dielectric and electro-mechanical measurements. The pre ...

EPFL2022

Lifetime of dielectric elastomer actuators under DC electric fields

Fabio Beco Albuquerque

Dielectric elastomer actuators (DEAs) are interesting soft actuators compared to other actuation technologies owing to large achievable actuation strains, high energy density and fast actuation. However, because DEAs need to be operated under high electric ...

EPFL2022

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

Elison de Nazareth Matioli, Georgios Kampitsis

The emergence of wide bandgap power devices has brought the attention back to the flying capacitor (FC) multilevel inverters with a large number of stages, in an effort to increase the power density by minimizing the passive components. The main challenge ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Stress effects on the impedance and ferroelectricity of PVDF-BiFeO3-MWCNT films using xanthan gum as dispersant

Frank Nüesch, Francis Owusu

Composite films based on dispersions of bismuth ferrite (BiFeO3) in polyvinylidene fluoride (PVDF) matrixes were prepared in the presence of multiwalled-carbon-nanotubes (MWCNT), using xanthan gum (XG) as dispersant. Films were prepared by spin coating and ...

ELSEVIER SCIENCE SA2022

Induced giant piezoelectricity in centrosymmetric oxides

Dragan Damjanovic, Paul Muralt, Mahmoud Hadad, Vasiliki Tileli, Lukas Riemer, Daesung Park

Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric materials must have a noncentrosymmetric crystal structure. For more than a century, this has remained a major obstacle ...

American Association for the Advancement of Science2022

Electrical Model of a Wireless mW-Power and Mbps-Data Transfer System Over a Single Pair of Coils

Alexandre Schmid, David Palomeque Mangut

This paper proposes a system to transfer both mW-power and Mbps-data over an inductive link using a single pair of coils. The system is able to handle a wide range of loads by implementing a load adapter block that divides the operation into two phases: a ...

IEEE2022

Recent Advances in Piezoelectric Materials for Electromechanical Transducer Applications

Dragan Damjanovic

Ferroelectricity has made a huge impact on science and technology since Joseph Valasek (then a Ph.D. student at the University of Minnesota) discovered it in 1920, a little longer than 100 years ago. Whereas Dr. Valasek's original research was motivated by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Jean-François Carlin, Nicolas Grandjean, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Surface Susceptibilities as Characteristic Models of Reflective Metasurfaces

Karim Achouri, Shourya Dutta Gupta, Ville Tuovi Tiukuvaara

While metasurfaces (MSs) are constructed from deeply subwavelength unit cells, they are generally electrically large and full-wave simulations of the complete structure are computationally expensive. Thus, to reduce this high computational cost, nonuniform ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Jun Ma, Vasiliki Tileli, Taifang Wang, Tzu-Hsien Shen, Catherine Erine, Luca Nela

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Luca Nela

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Hiroshi Iwai

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...

2020