Publications associées à Vibration Energy Harvesting with PZT Micro Device

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Power Aware Placement of On-Chip Voltage Regulators

Rassul Bairamkulov

In traditional power delivery networks, the on-chip supply voltage is provided by board-level converters. Due to the significant distance between the converter and the load, variations in the load current are not effectively managed, producing a significan ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Impact of beam-coupling impedance on the Schottky spectrum of bunched beam

Tatiana Pieloni, Nicolas Frank Mounet, Christophe Emmanuel R. Lannoy

The Schottky monitors of the Large Hadron Collider (LHC) can be used for non-invasive beam diagnostics to estimate various bunch characteristics, such as tune, chromaticity, bunch profile or synchrotron frequency distribution. However, collective effects, ...

Iop Publishing Ltd2024

A Two-Wired High Input Impedance and High CMRR Active Electrode Insensitive to Component Mismatch

Alexandre Schmid, Mehdi Saberi

This article proposes a new two-wired amplifying active electrode (AE), presenting a high input impedance and a high common-mode rejection ratio (CMRR). In the proposed structure, the input impedance and the CMRR of the system are considerably increased by ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Ripple Voltage and Loss Reduction of Single-Phase ISOP SST by Eliminating the Second Harmonic Current in LLC Converters

Drazen Dujic, Tianyu Wei, Andrea Cervone

In two-stage solid-state transformers with input-series output-parallel structure, the LLC converter operating at a fixed switching frequency is a common choice for the isolated DC/DC conversion stage because it can provide a high efficiency and a fixed vo ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

On the use of Cramér-Rao Lower Bound for least-variance circuit parameters identification of Li-ion cells

Mario Paolone, Vladimir Sovljanski

Electrochemical Impedance Spectroscopy (EIS) and Equivalent Circuit Models (ECMs) are widely used to characterize the impedance and estimate parameters of electrochemical systems such as batteries. We use a generic ECM with ten parameters grouped to model ...

2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

High-frequency response of a hemispherical grounding electrode

Farhad Rachidi-Haeri, Marcos Rubinstein, Antonio Sunjerga

The lightning discharge current is characterized by a high-frequency spectrum extending from DC to about 10 MHz. The calculation of the grounding impedance is one of the most important aspects of designing lightning protection systems. The search for analy ...

Elsevier2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

DC Power Distribution Networks with Direct Current Transformers

Renan Pillon Barcelos

The shift towards DC power distribution networks, enabled by power electronics technologies, is changing the nature of electrical power systems. Nowadays, DC power distribution networks can effectively support the high penetration of distributed energy res ...

EPFL2024

X-Attack 2.0: The Risk of Power Wasters and Satisfiability Don’t-Care Hardware Trojans to Shared Cloud FPGAs

Mirjana Stojilovic, Wei Hu, Dina Gamaleldin Ahmed Shawky Mahmoud, Beatrice Shokry Samir Shokry

Cloud computing environments increasingly provision field-programmable gate arrays (FPGAs) for their programmability and hardware-level parallelism. While FPGAs are typically used by one tenant at a time, multitenant schemes supporting spatial sharing of c ...

2024

Static and Dynamic Voltage Balancing for an IGCT-Based Resonant DC Transformer

Drazen Dujic, Nikolina Djekanovic, Renan Pillon Barcelos

This paper focuses on the operational characteristics of a medium voltage resonant DC transformer based on a split capacitor IGCT 3L-NPC leg. The study delves into both the dynamic and static balancing aspects of the 3L-NPC when operating in a two-level, 5 ...

2024

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Heng Fang, Rui Lu, Chengmin Li

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

Ieee-Inst Electrical Electronics Engineers Inc2024

On Energy Control of Modular Multilevel Converters

Milan Utvic

Owing to the advancements in the area of power electronics, efficient and flexible ac to dc conversion is made possible, bringing back into focus the idea of the dc power transmission at various voltage levels. Several technical and economical factors advo ...

EPFL2023

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Zhengwen Jiang, Gian Luca Barbruni, Yihe Zhao

Label-free biosensors, combined with miniaturized micro-electromechanical sensory platforms, offer an attractive solution for real-time and facile monitoring of biomolecules due to their high sensitivity and selectivity without the need for specifically la ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Drazen Dujic, Chengmin Li

The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

2023

Self-Synchronized Grid Impedance Estimation Unit using Interpolated DFT Technique

Drazen Dujic, Jules Christian Georges Macé, Andrea Cervone

Estimating the impedance of a grid-connected device or of a grid at the point of common coupling is important for evaluating the interaction between them. Impedance measurement involves a perturbation injection device, that perturbs the system, and a measu ...

2023

NbN films with high kinetic inductance for high-quality compact superconducting resonators

Edoardo Charbon, Simone Frasca, Pasquale Scarlino, Vincent Jean Yves Jouanny, Fabian Oppliger, Fabrizio Minganti, Marco Scigliuzzo, Roberto Musio

Niobium nitride (NbN) is a particularly promising material for quantum technology applications, as it shows the degree of reproducibility necessary for large-scale superconducting circuits. We demonstrate that resonators based on NbN thin films present a o ...

American Physical Society (APS)2023