Publication
A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at least one oxygen gettering layer NOy, wherein the resistive switching device further includes an electrically conductive top electrode.
Raffaella Buonsanti, Anna Loiudice, Petru Pasquale Albertini, Ona Segura Lecina, Coline Marie Agathe Boulanger, Philippe Benjamin Green, Mark Adrian Newton, Krishna Kumar, Jari Leemans
Nicola Marzari, Iurii Timrov, Eric Macke
Mohammad Samizadeh Nikooytabalvandani