Publications associées à Aging in the relaxor and ferroelectric state of Fe-doped (1-x)(Bi1/2Na1/2)TiO3-xBaTiO3 piezoelectric ceramics

Ultrahigh Electrostrictive Effect in Lead-Free Ferroelectric Ceramics Via Texture Engineering

The electrostrictive effect, which induces strain in ferroelectric ceramics, offers distinct advantages over its piezoelectric counterpart for high-precision actuator applications, including anhysteretic behavior even at high frequencies, rapid reaction ti ...

Amer Chemical Soc2023

Domain Imaging and Switching Dynamics in BaTiO3-Based Photonic Integrated Devices

Jacqueline Geler Kremer

Keeping up with our constantly connected lifestyle of instant messages and video streaming has its repercussions. Data centers have been gobbling up resources becoming a significant share of the energy used worldwide. To keep up with demand and curb the en ...

EPFL2023

How to Make Elastomers Piezoelectric?

Frank Nüesch, Francis Owusu

Piezoelectrics play a significant role in modern electronics and electric devices. Thermal or mechanical stress on such materials induces a change in polarization generating an electric response, which is the sole effect of why they are so interesting. How ...

Wiley2023

Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics

Dragan Damjanovic, Fangping Zhuo

We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible hightemperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO3. Dislocations wellaligned along the [001] axis and associated strain field ...

AMER PHYSICAL SOC2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Yanfei Zhao, Juan Francisco Gonzalez Marin, Ahmet Avsar, Cheol Yeon Cheon, Kristians Cernevics, Zhenyu Wang, Mukesh Kumar Tripathi, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Defect-induced magnetism in homoepitaxial SrTiO3

Mihai Adrian Ionescu, Daesung Park

Along with recent advancements in thin-film technologies, the engineering of complex transition metal oxide heterostructures offers the possibility of creating novel and tunable multifunctionalities. A representative complex oxide is the perovskite stronti ...

AIP Publishing2022

Ferroelectric Effects Probed by in situ Transmission Electron Microscopy

Reinis Ignatans

Ferroelectric perovskite oxides are widely used in sensors, actuators and optical modulators and, at the same time, they show promise for implementation in future applications such as energy storage, memory and cooling devices. At the infancy of the discov ...

EPFL2022

Nonlinear electro-mechanical coupling and thermally stimulated currents in relaxor ferroelectrics

Lukas Riemer

In this work, the emergence of polarization and electro-mechanical coupling in Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3 â PbTiO3 was investigated by means of thermally stimulated current, and nonlinear dielectric and electro-mechanical measurements. The pre ...

EPFL2022

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

Jan Hugo Dil

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, alpha-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to g ...

Nature Portfolio2022

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Luca Nela

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Jean-François Carlin, Nicolas Grandjean, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Interface-Dominated Time-Dependent Behavior of Poled Poly(Vinylidene Fluoride–Trifluoroethylene)/Barium Titanate Composites

Dragan Damjanovic, Yves Leterrier, Véronique Michaud, Sara Dalle Vacche

Composites in which particles of ferroelectric ceramic phase are randomly dispersed in a polymeric matrix are of interest because of flexibility, conformability, and ease of processing. However, their piezoelectric properties are rather low, unless very hi ...

2020

Thermal coarsening of individual titanate nanowires and their assemblies: Surface vs. bulk diffusion

Luca Rossi, László Forró, Xavier Berdat, Massimo Spina, Endre Horvath, Laurent Syavoch Bernard, Sergiy Katrych

The thermal coarsening of titanate nanowires was investigated from room temperature to 1000 degrees C by AFM, SEM, XRD and Raman spectroscopy. Phase transformation kinetics and the external morphology were studied in two configurations: i) as individual an ...

2020

Actuation of piezoelectric structures with ferroelectric thin films having multiple elements

Paul Muralt

A method for driving piezoelectric elements of a micro-system. The piezoelectric elements comprising a ferroelectric thin film, and being configured to be part of any one or a combination of items of a list comprising: a cantilever, a bridge, a diaphragm, ...

2020

TiO2- based ceramics, from basic science to applications

Nanomaterials and nanoparticles are nowadays used in a wide range of applications; from sunscreens, paint and food industry to catalytic processes, lighting, TV's and displays, their presence is percolating in our daily life. New applications rise every da ...

EPFL2020

Atomic scale symmetry and polar nanoclusters in the paraelectric phase of ferroelectric materials

Dragan Damjanovic, Emad Oveisi, Sina Hashemi Zadeh, Takuya Hoshina

The nature of the "forbidden" local- and long-range polar order in nominally nonpolar paraelectric phases of ferroelectric materials has been an open question since the discovery of ferroelectricity in oxide perovskites (ABO3). A currently considered model ...

Nature Research2021

Fabrication and Characterisation of Epitaxial PMN-PT Nano-structures

Xiao Di

Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...

EPFL2019

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling

Paul Muralt, Thomas La Grange, Silviu Cosmin Sandu, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko, Kaoru Yamashita

Accurate property determination of the piezoelectric thin film material Al(1-x)Sc(x)N is necessary for designing the next generation of radio frequency resonators in mobile communication, and for testing results of ab initio calculations. Sound velocity an ...

WILEY2019