Publications associées à Fonction OU

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

In-situ atomic level observation of the strain response of graphene lattice

Klaus Kern, Jz -Yuan Juo

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility ...

Nature Portfolio2023

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Mihai Adrian Ionescu, Shokoofeh Sheibani

Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Paul Mos, Arin Can Ülkü, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A Deeper Look at the Energy Consumption of Lightweight Block Ciphers

Francesco Regazzoni, Subhadeep Banik, Muhammed Fatih Balli, Andrea Felice Caforio

In the last few years, the field of lightweight cryptography has seen an influx in the number of block ciphers and hash functions being proposed. In the past there have been numerous papers that have looked at circuit level implementation of block ciphers ...

IEEE2021

Three-Input Gates for Logic Synthesis

Giovanni De Micheli, Mathias Soeken, Dewmini Sudara Marakkalage, Eleonora Testa, Heinz Riener

Most logic synthesis algorithms work on graph representations of logic functions with nodes associated with arbitrary logic expressions or simple logic functions and iteratively optimize such graphs. While recent multilevel logic synthesis efforts focused ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Further Results on Efficient Implementations of Block Cipher Linear Layers

Subhadeep Banik

At the FSE conference of ToSC 2018, Kranz et al. presented their results on shortest linear programs for the linear layers of several well known block ciphers in literature. Shortest linear programs are essentially the minimum number of 2-input xor gates r ...

2021

Shrinking FPGA Static Power via Machine Learning-Based Power Gating and Enhanced Routing

Mirjana Stojilovic, Hossein Asadi, Zeinab Seifoori

Despite FPGAs rapidly evolving to support the requirements of the most demanding emerging applications, their high static power consumption, concentrated within the routing resources, still presents a major hurdle for low-power applications. Augmenting the ...

2021

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

Reconfigurable Logic Gates Based on Programable Multistable Mechanisms

Simon Nessim Henein, Hubert Pierre-Marie Benoît Schneegans, Ilan Vardi, Mohamed Gamal Abdelrahman Ahmed Zanaty

Binary logic gates are building blocks of computing machines, in particular, electronic computers. One variant is the programable logic gate, also known as the reconfigurable logic gate, in which the logical function implemented can be modified. In this pa ...

2020

Logic-in-memory based on an atomically thin semiconductor

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Ahmet Avsar, Yanfei Zhao, Guilherme Migliato Marega, Zhenyu Wang

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

2020

Cryo-CMOS for Analog/Mixed-Signal Circuits and Systems

Edoardo Charbon, Fabio Sebastiano

CMOS circuits operating at cryogenic temperature (cryo-CMOS) are required in several low-temperature applications. A compelling example is the electronic interface for quantum processors, which must reside very close to the cryogenic quantum devices it ser ...

IEEE2020

Swap and Rotate: Lightweight Linear Layers for SPN-based Blockciphers

Serge Vaudenay, Francesco Regazzoni, Subhadeep Banik, Muhammed Fatih Balli

In CHES 2017, Jean et al. presented a paper on "Bit-Sliding" in which the authors proposed lightweight constructions for SPN based block ciphers like AES, PRESENT and SKINNY. The main idea behind these constructions was to reduce the length of the datapath ...

2020

A Magnet-Based Timing System to Detect Gate Crossings in Alpine Ski Racing

Kamiar Aminian, Benedikt Fasel

In alpine skiing, intermediate times are usually measured with photocells. However, for practical reasons, the number of intermediate cells is limited to three⁻four, making a detailed timing analysis difficult. In this paper, we propose and validate a magn ...

2019

More Results on Shortest Linear Programs

Subhadeep Banik

At the FSE conference of ToSC 2018, Kranz et al. presented their results on shortest linear programs for the linear layers of several well known block ciphers in literature. Shortest linear programs are essentially the minimum number of 2-input xor gates r ...

2019

Triboelectric‐TFT Flip‐Flop for Bistable Latching of Dielectric Elastomer Actuators

Danick Briand, Herbert Shea, Rubaiyet Iftekharul Haque, Alexis Pierre Henri Marette, Xiaobin Ji, Ronan Julien Hinchet

A high‐voltage flip‐flop combining two self‐powered soft sensors with a flexible high‐voltage thin film transistor (HVTFT) is reported, and is used to electrically latch dielectric elastomer actuators (DEAs) in zero and high‐strain states. Two touch‐actuat ...

2019

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

A 512 x 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Arin Can Ülkü

In this paper, we report on SwissSPAD2, an image sensor with 512 x 512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), a 1-b memory, and a gating mechanism capable of turning the SPAD ON and OFF, with a skew of 250 and 344 p ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Sensing device for sensing minor charge variations

Mihai Adrian Ionescu, Teodor Rosca, Cem Alper

A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate. ...

2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Giovanni Santoruvo, Taifang Wang

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019