Publications associées à Saturation velocity

High-Temperature HEMT Mode

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Correlation between conduction velocity and frequency analysis in patients with atrial fibrillation using high-density charge mapping

Jean-Marc Vesin, Lam Dang

Spectral analysis of atrial signals has been used to identify regions of interest in atrial fibrillation (AF). However, the relationship to the atrial substrate is unclear. In this study, we compare regions with dominant frequency (DF), simultaneously dete ...

SPRINGER HEIDELBERG2022

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Laser soliton microcombs heterogeneously integrated on silicon

Tobias Kippenberg, Rui Ning Wang, Junqiu Liu, Wenle Weng, Zeyu Zhang, Chao Xiang, Zeyu Zhang

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Armin Jafari

The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...

EPFL2021

Modeling of Short-Channel Effects in GaN HEMTs

Farzan Jazaeri

In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the ecole Poly ...

2020

Experimental studies of the equilibrium and out-of-equilibrium electronic structure of non-symmorphic topological materials

Gianmarco Gatti

Symmetry and topology are fundamental properties of nature. Mathematics provides us with a general framework to understand these concepts. On one side, symmetry describes the invariance properties of an object for specific transformations. On the other sid ...

EPFL2020

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Halil Kerim Yildirim, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Furkan Karakaya

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

The low ON-resistance of wide-band-gap (WBG) transistors is a key feature for efficient power converters, however, the anomalous loss in their output capacitance (COSS) severely limits their performance at high switching frequencies. Characterizing COSS-lo ...

2019

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

Yttrium zinc tin oxide high voltage thin film transistors

Danick Briand, Herbert Shea, Alexis Pierre Henri Marette

We demonstrate that doping the semiconductor zinc tin oxide (ZTO) with yttrium leads to a high-voltage thin film transistor (HVTFT) with enhanced switching performance. Adding 5% yttrium leads to an increase in the on-off ratio from 40 to 1000 at an operat ...

AIP American Institute of Physics2018

Giant multiphoton absorption for THz resonances in silicon hydrogenic donors

Gabriel Aeppli, Le Nguyen Hoang

The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors. The N-photon absorption (NPA) rate for donors in semiconductors scales proportionally from hydroge ...

Nature Publishing Group2018

A single chip electron spin resonance detector based on a single high electron mobility transistor

Giovanni Boero, Nergiz Sahin Solmaz, Alessandro Valentino Matheoud

Single-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magne ...

Academic Press Inc - Elsevier Science2018

Topological phase transitions driven by strain in monolayer tellurium

Oleg Yazyev, Quansheng Wu, Wei Zhang

Two-dimensional (2D) Xenes of a single type of element can offer fascinating electronic properties, such as massless Dirac fermions for extremely high charge-carrier mobility and topological insulators for dissipationless electron transport. However, the r ...

AMER PHYSICAL SOC2018

Evaluating Charge Carrier Transport and Surface States in CuFeO

Kevin Sivula, Florian Le Formal, Nestor Guijarro Carratala, Xavier Adrian Jeanbourquin, Mathieu Steven Prévot, Wiktor Stefan Bourée

Interest in delafossite (CuFeO2) as a candidate p-type photocathode for photoelectrochemical (PEC) solar fuel production has recently been increasing, mainly due to its excellent stability in aqueous environments and favorable light absorption properties. ...

American Chemical Society2017

Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits

Christian Enz, Alessandro Pezzotta

This paper presents the simplified charge-based EKV MOSFET model and shows that it can be used for advanced CMOS processes despite its very few parameters. The concept of inversion coefficient is then presented as an essential design parameter that spans t ...

IEEE2016

Graphene Field Effect Devices and Circuits : Theory and Fabrication

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars ...

EPFL2016

Graphene for Nanoelectronic Applications

Pankaj Sharma

During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...

EPFL2015

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

Amer Chemical Soc2015