Publications associées à Silicon Valley

SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits

Christian Enz, Hung-Chi Han, Antonio D'Amico

This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV pa ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Metropolitan Innovation Systems: Inquiry into the co-evolving relations between Industry, University and Government

Jiayun Shen

Innovation is crucial and decisive for the long-term development of a metropolitan region in the global economy. While firms certainly play a significant role in the development of specific innovation, the environment that nur-tures innovative firms and di ...

EPFL2020

Impact of oxygen content in powders on the morphology of the laser molten tracks in preparation for additive manufacturing of silicon

Patrik Willi Hoffmann, Lucas Güniat, Marc Leparoux

Powder additive pulsed Nd:YAG laser (wavelength 1064 nm), with the aim of preparing AM of such material. The influence of oxygen content in the initial silicon powders on the continuous tracks morphology was investigated. It was found that the initial oxyg ...

ELSEVIER2020

Optimus Prime: Accelerating Data Transformation in Servers

Babak Falsafi, Christoph Koch, Siddharth Gupta, Mario Paulo Drumond Lages De Oliveira, Mark Johnathon Sutherland, Arash Pourhabibi Zarandi, Zilu Tian, Hussein Kassir

Modern online services are shifting away from monolithic applications to loosely-coupled microservices because of their improved scalability, reliability, programmability and development velocity. Microservices communicating over the datacenter network req ...

ACM2020

Development of a monolithic near-field optomechanical system

Ryan Daniel Schilling

In the same year as Einstein's annus mirabilis, English engineer and physicist John Flemming patented the first rectifying diode, which he called the "Flemming valve". Einstein's work on the photoelectric effect would change our understanding of the nature ...

EPFL2018

Aqueous metal-organic solutions for YSZ thin film inkjet deposition

Andreas Stephan Lesch

Inkjet printing of 8% Y2O3-stabilized ZrO2 (YSZ) thin films is achieved by designing a novel water-based reactive ink for Drop-on-Demand (DoD) inkjet printing. The ink formulation is based on a novel chemical strategy that consists of a combination of meta ...

Royal Society of Chemistry2017

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

Edoardo Charbon, Fabio Sebastiano

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a mu ...

2017

Near/Sub-Threshold Circuits and Approximate Computing: The Perfect Combination for Ultra-Low-Power Systems

Christian Enz, Vincent Frédéric Camus, Jérémy Lucien Maurice Schlachter

While sub/near-threshold design offers the minimal power and energy consumption, such approach strongly deteriorates circuit performances and robustness against PVT (process/voltage/temperature) variations, leading to gigantic speed penalties and large sil ...

IEEE2015

Automatic Generation of Inexact Digital Circuits by Gate-level Pruning

Christian Enz, Vincent Frédéric Camus, Jérémy Lucien Maurice Schlachter

Inexact or approximate circuits show great ability to reduce power consumption at the cost of occasional errors in comparison to their conventional counterparts. Even though the benefits of such circuits have been proven for many applications, they are not ...

2015

Characterization and analysis of InAs/p-Si heterojunction nanowire-based solar cell

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Gözde Tütüncüoglu, Eleonora Russo, Anna Dalmau Mallorquí

The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 x 1 mm(2) array of InAs nanowires on p-type silicon for the fabrication ...

Institute of Physics2014

Memristive Biosensors Under Varying Humidity Conditions

Giovanni De Micheli, Sandro Carrara, Davide Sacchetto, Yusuf Leblebici, Camilla Baj-Rossi, Francesca Puppo, Akshat Dave

We attempt to examine the potential of silicon nanowire memristors in the field of nanobiosensing. The mem- ristive devices are crystalline Silicon (Si) Nanowires (NWs) with Nickel Silicide (NiSi) terminals. The nanowires are fabricated on a Silicon-on-Ins ...

Institute of Electrical and Electronics Engineers2014

A Novel Compressive Sensing Architecture for High-Density Biological Signal Recording

Alexandre Schmid, Mahsa Shoaran, Hossein Afshari

The massive amount of data recorded by dense electrode arrays which are routinely connected to Nyquist-sampling signal conditioning blocks introduces new design challenges for implantable and wireless biological signal acquisition. Five different architect ...

2014

Offset Compensation Based on Distributed Hall Cell Architecture

Pierre-André Farine, Pavel Kejik, Pierre-François Thibault Bourdelle

A new offset reduction strategy for CMOS Hall devices is proposed. The novelty is to fragment the Hall device into multiple Hall blocks, distributed over the silicon area and easy to interconnect. The suitable number of Hall blocks and the bias current lev ...

Institute of Electrical and Electronics Engineers2013

Layout and Architecture Issues in Hall based CMOS microsystems

Pierre-André Farine, Pavel Kejik

The Hall cells intended for industrial applications are mainly produced in silicon integrated circuit technology. Recently, the increased use of other technologies, such as GaAs, InAs and InSb, have been reported. However, a single chip solution comprising ...

Czech Technical University in Prague, Faculty of Electrical Engineering2012

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Giovanni De Micheli, Davide Sacchetto, Michail Zervas, Yusuf Leblebici, Yüksel Temiz

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching ...

Institute of Electrical and Electronics Engineers2012

A 120mV startup circuit based on charge pump for energy harvesting circuits

Pierre-André Farine, Cyril Botteron

In this paper, a 120mV input startup circuit based on novel charge pump architecture is proposed. The startup circuit can boost input voltages ranging from 120mV to 300mV while supplying voltages 280mV to 1.6V at the output with approximately 23% efficienc ...

2011

CELONCEL: Effective Design Technique for 3-D Monolithic Integration targeting High Performance Integrated Circuits

Giovanni De Micheli, Shashi Kanth Bobba, Thomas Ernst

3-D monolithic integration (3DMI), also termed as sequential integration, is a potential technology for future gigascale circuits. Since the device layers are processed in sequential order, the size of the vertical contacts is similar to traditional contac ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

A silicon model of the inner hair cell

Yusuf Leblebici

In this paper we present an electrical model of the inner hair cell based on an improved mathematical model. The model is implemented in silicon in the current domain using translinear circuits. It improves on previous models by taking into consideration t ...

2011

Design Methods and Tools for 3D Integration

Giovanni De Micheli, David Atienza Alonso, Yusuf Leblebici, Vasileios Pavlidis

The design of 3-dimensional integrated circuits requires new specialized tools, methods and flows. Whereas some tools are on the market and some design flows for standard ICs are extended to handle die stacking and through-silicon vias, much R&D has still ...

2011

Control of the Screening Ability at a Ferroelectric-Semiconductor Interface

Nava Setter, Alexander Tagantsev, Maxim Gureev

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very t ...

2011