Publications associées à Masque photographique

First developments towards producing inductive magnetic sensors using state-of-the-art photolithography techniques

Duccio Testa, Marcus Cemes, Ambrine Douhane

Inductive magnetic sensors are needed for tokamak operation to provide the low-frequency (LF) measurements leading to the equilibrium reconstruction and to monitor the higher frequency (HF) instabilities; the HF magnetic sensors are often also used as a ba ...

2023

Fabrication and applications of AuAg alloy metasurfaces and hybrid metal dielectric nanoantennas

Debdatta Ray

The most prevalent materials used in the field of plasmonics are Au and Ag. However, for the past few years, the plasmonic community has also been looking for alternative materials that have lower losses than Au and higher stability than Ag. This thesis is ...

EPFL2021

Femtosecond laser-based optomechanical processes for permanent and high-precision fine alignment of optical systems

Saood Ibni Nazir

Miniaturization has been at the forefront of scientific research in the past decade covering diverse areas such as electronics, mechanics, and optics. While 'small is beautiful' may be a vast generalization, the true benefits of miniaturization are especia ...

EPFL2021

Tolerancing the surface form of aspheric microlenses manufactured by wafer-level optics techniques

Toralf Scharf, Wilfried Noell, Jeremy Béguelin

Tolerancing is an important step toward the fabrication of high-quality and cost-effective lens surfaces. It is critical for wafer-level optics, when up to tens of thousands microlenses are fabricated in parallel and whose surfaces cannot be formed individ ...

OPTICAL SOC AMER2020

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

Toralf Scharf, Wilfried Noell, Chen Yan, Raoul Kirner, Andreas Vetter

In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is opti ...

2019

Optical-stack optimization for improved SPAD photon detection efficiency

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Ekin Kizilkan, Rolando Ferrini, Scott Anthony Lindner, Arin Can Ülkü, Marc Schnieper, Frédéric Zanella

Single-photon avalanche diodes (SPADs) are direct photon-to-digital detectors that enable scalable arrays with Poisson-limited signal-to-noise ratio and picosecond timing resolution. However, SPAD detectors require a guard-ring structure to prevent lateral ...

2019

On Advanced Large-Field Photolithography

Raoul Kirner

The information age we live in today relies on highly integrated devices. They are fabricated with the help of photolithography, the patterning technique at the heart of their production. With the continuous demand for higher integration density to achieve ...

EPFL2019

Spatial coherence properties of an LED-based illumination system for mask-aligner lithography

Hans Peter Herzig, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi

A high-power LED-based illumination system has been developed as a replacement for the mercury arc lamps used in mask-aligner lithography. LEDs are arranged in a grid array and placed in the entrance aperture of individual reflectors. Those reflectors decr ...

SPIE2019

Improving the resolution in mask-aligner lithography

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

For the back-end microfabrication in integrated circuits and for the manufacturing of light emitting diodes, proximity mask-aligner lithography is still the tool of choice, due to its simplicity and low costs. However, the downscaling of functional element ...

IEEE2018

High-power modular LED-based illumination systems for mask-aligner lithography

Hans Peter Herzig, Johana Bernasconi, Toralf Scharf

Mask-aligner lithography is traditionally performed using mercury arc lamps with wavelengths ranging from 250 nm to 600 nm with intensity peaks at the i, g and h lines. Since mercury arc lamps present several disadvantages, it is of interest to replace the ...

2018

High power ultraviolet LED illumination systems: coherence properties and applications in photolithography

Johana Bernasconi

Mask-aligner photolithography is a technology used to replicate patterns from a mask to a photosensitive substrate. It is widely used in the fabrication of MEMS and micro-optical components, and for other applications with dimensions in the micrometer rang ...

EPFL2018

High power modular LED-based illumination system for lithography applications

Hans Peter Herzig, Marcel Groccia, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi

Mask-aligner lithography is a technology used to transfer patterns with critical dimensions in the micrometer range from below 1 micron for contact printing to a dozen of microns in proximity printing. This technology is widely used in the fabrication of M ...

2018

Enabling proximity mask-aligner lithography with a 193nm CW light source

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-ampliﬁcation conﬁguraton is frequency-quadrupled using lithiumtriborate and potassium-ﬂuoro ...

2018

Mask-aligner Talbot lithography using a 193 nm CW light source

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

We present and discuss Talbot mask-aligner lithography, relying on a continuous wave laser emitting at 193nm for the illumination. In this source, a diode laser at 772nm is amplified by a tapered amplifier in master-oscillator power-amplifier configuration ...

2018

Printing sub-micron structures using Talbot mask-aligner lithography with a 193 nm CW laser light source

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged a ...

2018

Unified rule based correction for corners in proximity lithography mask using high resolution features

Hans Peter Herzig, Toralf Scharf, Krishnaparvathy Puthankovilakam

Printing industry and printing techniques are increasing its market value by new methodologies. The resolution and accuracy of the pattern transfer is always a challenge for the industry, especially for the proximity printing industries which use mask alig ...

Elsevier2017

Limitations of Proximity Lithography Printing : Simulations, Experiments, and Applications

Krishnaparvathy Puthankovilakam

Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is also known as optical lithography since it uses light to transfer the pattern. The main exposure techniques exist in the industry are projection printing, ...

EPFL2017

A reproducible method for μm precision alignment of PDMS microchannels with on-chip electrodes using a mask aligner

Philippe Renaud, Jonathan Bastien Cottet

This paper describes a reproducible method for μm precision alignment of polydimethylsiloxane (PDMS) microchannels with coplanar electrodes using a conventional mask aligner for lab-on-a-chip applications. It is based on the use of a silicon mold in combin ...

American Institute of Physics2017

Intensity and phase fields behind phase-shifting masks studied with high-resolution interference microscopy

Hans Peter Herzig, Toralf Scharf, Myun Sik Kim, Ali Naqavi, Krishnaparvathy Puthankovilakam

We try to find out the details of how light fields behind the structures of photomasks develop in order to determine the best conditions and designs for proximity printing. The parameters that we use approach real situations like structure printing at prox ...

SPIE-Intl Soc Optical Eng2016

Panel: Looking Backwards and Forwards

Giovanni De Micheli

Ten years ago, at 90 nanometers, EDA was challenged and deemed inadequate in dealing with increasing complexity, power consumption, and sub-wavelength lithography, thus harming the progress of mobile phones. Today, at 10 nanometers, integration capacity ha ...

IEEE2016