Tension de polarisation

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Publications associées (29)

Toward ultra-low power design methodology for frequency generation in the IoT design space

Mathieu Yves Hervé Coustans

Today, the semiconductor industry is feeding our digital world with more and more data coming from compact embedded electronics that are monitoring our environment and feeding analytics for action. Interaction with our digital world is mostly achieved thro ...

EPFL2019

Dynamic Average Diffusion With Randomized Coordinate Updates

Ali H. Sayed, Bicheng Ying, Kun Yuan

This work derives and analyzes an online learning strategy for tracking the average of time-varying distributed signals by relying on randomized coordinate-descent updates. During each iteration, each agent selects or observes a random entry of the observa ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

Elison de Nazareth Matioli, Armin Jafari

In this work, we present a new device concept for compact high-voltage sensing with high-impedance input port, consisting of an AlGaN/GaN high-electron-mobility channel controlled by trapped carriers generated by a metallic electrode. The high-voltage appl ...

Institute of Electrical and Electronics Engineers2019

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

Yttrium zinc tin oxide high voltage thin film transistors

Danick Briand, Herbert Shea, Alexis Pierre Henri Marette

We demonstrate that doping the semiconductor zinc tin oxide (ZTO) with yttrium leads to a high-voltage thin film transistor (HVTFT) with enhanced switching performance. Adding 5% yttrium leads to an increase in the on-off ratio from 40 to 1000 at an operat ...

AIP American Institute of Physics2018

High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

Alexis Pierre Henri Marette

This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate. Fi ...

EPFL2018

Charge-Based Distortion Analysis of Nanoscale MOSFETs

Christian Enz, Francesco Chicco, Alessandro Pezzotta

This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...

2018

An integrator-differentiator TIA using a multi-element pseudo-resistor in its DC servo loop for enhanced noise performance

Georg Fantner, Jens Anders

In this paper, we present an integrator-differentiator transimpedance amplifier (TIA) featuring a multielement pseudo-resistor (MEPR) in the DC feedback path for improved noise performance in the presence of non-zero DC input currents. The presented protot ...

IEEE2018

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. I ...

2017

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