Publications de Pierre Michel Corfdir

Radius-dependent homogeneous strain in uncoalesced GaN nanowires

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al2O3 (0001) substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction p ...

PERGAMON-ELSEVIER SCIENCE LTD2020

Tuning the g-factor of neutral and charged excitons confined to self-assembled (Al,Ga)As shell quantum dots

Yannik Fontana, Pierre Michel Corfdir, Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo

We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga) As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on ...

American Institute of Physics2014

Exciton footprint of self-assembled AlGaAs quantum dots in core-shell nanowires

Samuel Sonderegger, Yannik Fontana, Pierre Michel Corfdir, Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo

Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here we study the fine structure of gallium-rich quantum dots nested in ...

American Physical Society2014

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Pierre Michel Corfdir, Anna Fontcuberta i Morral, Emanuele Uccelli, Sonia Conesa Boj

Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the high surface-to-volume ratio of nanowires. There remains intense debate about the exact characteristics of the band structure of the novel crystal phases, ...

Amer Chemical Soc2013

Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy

Pierre Michel Corfdir, Anna Fontcuberta i Morral, Emanuele Uccelli

We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-ble ...

American Institute of Physics2013

Quantitative Cathodoluminescence Opens New Areas of Investigation in Semiconductor Research and Production

Jean-Daniel Ganière, Pierre Michel Corfdir

Cambridge, Cambridge University Press2013

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Pierre Michel Corfdir, Etienne François Olivier Giraud, Mehran Shahmohammadi

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Pierre Michel Corfdir

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures

Pierre Michel Corfdir

For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...

EPFL2011

Biexciton emission and crystalline quality of ZnO nano-objects

Jean-Philippe Ansermet, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Stadelmann, Anas Mouti, Pierre Michel Corfdir, Elisa Papa

The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconduct ...

Institute of Physics2011

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Pierre Michel Corfdir, Munehito Kagaya

Spatio-time-resolvedcathodoluminescence (STRCL) spectroscopy isimplemented to assess the local carrier dynamics in a 70 nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In GaN epilayer grown on a freestanding GaN substrate by me ...

2011

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Pierre Michel Corfdir

Cambridge, Cambridge University Press2011

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Stadelmann, Denis Martin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Yadira Arroyo Rojas Dasilva, Tiankai Zhu, Pierre Michel Corfdir

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been proc ...

Institute of Physics2011

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Pierre Michel Corfdir

Both weakly and strongly confined excitons are studied by time-resolved photoluminescence in a nonpolar nitride-based heterostructure grown by molecular beam epitaxy on the a-facet of a bulk GaN crystal, with an ultralow dislocation density of 2 × 105 cm-2 ...

2011

Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Jelena Ristic, Pierre Michel Corfdir

Cambridge, Cambridge University Press2010

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Tiankai Zhu, Pierre Michel Corfdir

We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons ...

American Institute of Physics2010

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jelena Ristic, Pierre Michel Corfdir

We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” formalism, of energies and envelope functions of electrons submitted to ...

2009

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

AIP American Institute of Physics2009

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Jacques Levrat, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009