Publications de Ji Cao | EPFL Graph Search

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

3d nano-electro-mechanical multiple-state carbon nanotube device structures and methods of fabrication

Mihai Adrian Ionescu, Ji Cao

A 3D M-CNT structure with at least one tri-state CNT NEM switch comprising at least an electrode as a source, an electrode as a gate and an electrode as a drain, a conductive carbon nanotube which is able to take three positions depending on a voltage appl ...

2013

Carbon Nanotube Precise Assembly for CMOS and NEMS Applications

Ji Cao

As complementary metal–oxide–semiconductor (CMOS) scaling meets fundamental limitations, revolutionary device concepts and materials are urgently needed as alternatives or supplements to CMOS technology. Carbon nanotubes (CNTs), featuring extraordinary phy ...

EPFL2013

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned suspended-body single-walled (SW) carbon nanotube field-effect transistors (CNFETs) with dual lateral gates have been demonstrated. Two independent lateral gates are symmetrically placed less than 100 nm away from the CNT channel. The operatio ...

2012

Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics

Mihai Adrian Ionescu, Ji Cao

We report optimized precise alignment of individual single-walled carbon nanotubes (SWCNTs) by the resist-assisted AC-dielectrophoresis (DEP) method. We can reproducibly control the alignment precision to sub-50 nm by customizing the critical DEP parameter ...

IEEE2012

Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

2012

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics ...

American Institute of Physics2012

Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits

Mihai Adrian Ionescu, Ji Cao, Wolfgang Amadeus Vitale

We report, for the first time, self-assembled cantilever and clamped-clamped tri-state carbon nanotube (T-CNT) nano-electro-mechanical (NEM) switches with sub-100 nm air-gap dual lateral gates. Unlike conventional bi-state CNT switches, the T-CNT NEM switc ...

Ieee2012

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Luca De Michielis, Alexandru Rusu, Nilay Dagtekin, Ji Cao, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011

Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors

Mihai Adrian Ionescu, Ji Cao

2011

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

Mihai Adrian Ionescu, Anupama Arun, Ji Cao

An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) is presented, combining the unique design of biased/floating potential electrode geometry and the technique of aligning CNTs by pre-de ...

2011