Publications de Sebastian Thimotee Bartsch

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

Junctionless Silicon Nanowire Resonator

Mihai Adrian Ionescu, Sebastian Thimotee Bartsch, Maren Arp

The development of nanoelectromechanical systems (NEMS) is likely to open up a broad spectrum of applications in science and technology. In this study, we demonstrate a novel double-transduction principle for silicon nanowire resonators which exploits the ...

2014

Junctionless nano-electro-mechanical resonant transistor

Mihai Adrian Ionescu, Sebastian Thimotee Bartsch

A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel (4) connecting a drain (9) and a source (10) electrode and movably fixed by at least two ends (11, 11') acting as said source and drain electrodes, respect ...

2014

Towards Nanomechanics and Nanoelectronics on a Single Chip

Sebastian Thimotee Bartsch

EPFL2013

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

Mihai Adrian Ionescu, Alexandru Rusu, Sebastian Thimotee Bartsch

We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-bas ...

American Institute of Physics2012

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

Mihai Adrian Ionescu, Alexandru Rusu, Sebastian Thimotee Bartsch

Nanoelectromechanical systems (NEMS) offer the potential to revolutionize fundamental methods employed for signal processing in today's telecommunication systems,1-4 owing to their spectral purity and the prospect of integration with existing technology. I ...

Institute of Physics2012

Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

2012

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Luca De Michielis, Alexandru Rusu, Nilay Dagtekin, Ji Cao, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011