Publications de Antonios Bazigos

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

Amer Chemical Soc2015

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Antonios Bazigos

In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band tunn ...

IEEE2015

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Institute of Electrical and Electronics Engineers2015

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

2015

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Didier Bouvet, Mihai Adrian Ionescu, Sara Rigante, Antonios Bazigos, Elizabeth Buitrago Godinez, Paolo Scarbolo

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

IEEE2015

FOSS EKV 2.6 parameter extractor

Jean-Michel Sallese, Wladyslaw Grabinski, Anurag Mangla, Antonios Bazigos, Farzan Jazaeri, Maria-Anna Chalkiadaki

The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS techno ...

Ieee2015

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Yu Pu, Antonios Bazigos

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Mihai Adrian Ionescu, Wladyslaw Grabinski, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Antonio Paone, Wolfgang Amadeus Vitale, Antonios Bazigos

IEEE2014

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Mihai Adrian Ionescu, Daniel Grogg, Antonios Bazigos

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring os ...

2014

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Mihai Adrian Ionescu, Wladyslaw Grabinski, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos

In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices ...

American Institute of Physics2014

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

The nanoscaled electrostatically actuated electromechanical ohmic switch is an emerging device with advanced performance in terms of ION/IOFF ratio. It is imperative that compact models accompany such novel devices in order to fully evaluate their potentia ...

Elsevier2014

A 6.7 MHz Nanoelectromechanical Ring Oscillator Using Curved Cantilever Switches Coated with Amorphous Carbon

Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digit ...

IEEE2014

Compact Modeling of Homojunction Tunnel FETs

Mihai Adrian Ionescu, Wladyslaw Grabinski, Luca De Michielis, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos, Cem Alper

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supp ...

IEEE2014

Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

Matthias Bucher, François Krummenacher, Jean-Michel Sallese, Antonios Bazigos

This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Ultra low power NEMFET based logic

Mihai Adrian Ionescu, Antonios Bazigos, Surya Shankar Dan

In this paper, we introduce a Nano-Electro-Mechanical Field Effect Transistor (NEMFET) based logic family tailored to the implementation of low speed and ultra low energy functional units and processors. Basic Boolean gates implemented with NEMFETs only ar ...

IEEE2013

A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body

Mihai Adrian Ionescu, Wladyslaw Grabinski, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos

IEEE2013

RF MEMS power sensors for ultra-low power wake-up circuit applications

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Antonios Bazigos

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

2013

RF Compact Modeling of High-voltage MOSFETs

Matthias Bucher, François Krummenacher, Jean-Michel Sallese, Antonios Bazigos

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of ...

Medknow Publications2012