Publications de Jean-Baptiste Leran

Towards Quantitative Terahertz Characterisation of Zinc Phosphide Thin Films for Photovoltaic Applications

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Léa Buswell, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

The earth-abundant and non-toxic material Zinc phosphide (Zn3P2) is a promising candidate for solar cell applications. However, growth of defect-free, high-quality thin films on substrates that can integrate with current technology (e.g. silicon) remains c ...

IEEE Computer Society2024

Investigating the Effect of Crystal Morphology on Optoelectronic Properties of Zinc Phosphide Thin Films via Optical-pump Terahertz Probe Spectroscopy

Elias Zsolt Stutz, Jean-Baptiste Leran, Léa Buswell, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Zinc phosphide ( Zn3P2) is a promising earth-abundant material for solar cell applications but calls for the further understanding of its optoelectronic properties. In this work, we perform contact-free and noninvasive optical-pump terahertz probe (OPTP) s ...

IEEE2023

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

AMER CHEMICAL SOC2022

Dataset for "GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays"

Anna Fontcuberta i Morral, Jean-Baptiste Leran, William Craig Carter, Nicholas Paul Morgan, Lea Ghisalberti, Wonjong Kim, Akshay Balgarkashi, Didem Dede

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

Zenodo2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Titouan Charvin, Didem Dede, Valerio Piazza

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicholas Paul Morgan, Lea Ghisalberti, Wonjong Kim, Akshay Balgarkashi, Didem Dede

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

2022

Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Léa Buswell, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of so ...

2022

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Santhanu Panikar Ramanandan, Rajrupa Paul, Mirjana Dimitrievska, Mischa Samuel Flór

Zinc phosphide (Zn3P2) is a II–V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spec ...

2022

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Maria Chiara Spadaro, Simon Robert Escobar Steinvall, Santhanu Panikar Ramanandan, Rajrupa Paul, Diego Armando Sandoval Salaiza, Mirjana Dimitrievska, Mischa Samuel Flór

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

2022

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Didem Dede, Valerio Piazza

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

Zenodo2022

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Wonjong Kim, Akshay Balgarkashi, Didem Dede, Valerio Piazza, Mirjana Dimitrievska

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Dirk Grundler, Ping Che, Simon Robert Escobar Steinvall, Andrea Mucchietto, Rajrupa Paul, Mohammad Hamdi

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Vladimir Dubrovskii

Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing ...

AMER CHEMICAL SOC2021

The path towards 1 µm monocrystalline Zn3 P2 films on InP: substrate preparation, growth conditions and luminescence properties

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Reza Zamani, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide (Zn_3 P_2) films with thicknesses up to ...

2021

Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul

Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality ma ...

ROYAL SOC CHEMISTRY2021

Dataset for "Van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties"

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Dirk Grundler, Ping Che, Andrea Mucchietto, Anna Kúkol'ová, Rajrupa Paul, Mohammad Hamdi

Raw data associated to the manuscript “van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties", J. Phys. Chem. C 2021, XXXX, XXX, XXX-XXX, DOI: https://doi.org/10.1021/acs.jpcc.1c00452 Abstract: To ...

Zenodo2021

Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn3P2), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and cont ...

2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, Wonjong Kim, Santhanu Panikar Ramanandan, Akshay Balgarkashi, Didem Dede

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Reza Zamani, Martin George Friedl, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Valerio Piazza

Large-scale deployment of thin-film photovoltaics will be facilitatedthrough earth-abundant components. Herein, selective area epitaxyand lateral overgrowth epitaxy are explored for the growth of zincphosphide (Zn3P2), a promising earth-abundant absorber. ...

2021

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Cyril Cayron, Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Nicolas Philippe Laurent Humblot, Roland Logé, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Shreyas Sanjay Joglekar

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...

2020