Publications associées à Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

CO2 Capture and Management Strategies for Decarbonizing Secondary Aluminium Production

François Maréchal, Daniel Alexander Florez Orrego, Meire Ellen Gorete Ribeiro Domingos, Réginald Germanier

The production of aluminium largely depends on the use of fossil fuels, resulting in the emission of significant amounts of greenhouse gases. As the aluminium industry is working towards decreasing its environmental burdens, the elimination of direct emiss ...

2024

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Swiss Negative Emissions Fund – paying for Net Zero

Philippe Thalmann, Sascha Nick

In this paper, we propose setting up a fund to finance the removal of all Swiss territorial GHG (greenhouse gas) emissions from 2030. The fund will accelerate decarbonization and help reach annual net zero emissions around 2040, and then progressively remo ...

E4S Enterprise for Society2022

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Catherine Erine

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

Institute of Electrical and Electronics Engineers2020

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Methodology for the identification of promising integrated biorefineries

Ayse Dilan Celebi

Steady increase in global energy consumption, greenhouse gas emissions, and depletion of fossil energy resources, together with increased attention towards sustainable development has prompted researchers to discover economical and environmentally competit ...

EPFL2019

Geospatial analysis and optimization of the incoming and stored CO2 emissions within the EPFL campus

Jean-Louis Scartezzini, Silvia Coccolo, Roberto Castello, Giovanni Mori

All the projected scenarios agree on the immediate necessity of reducing greenhouse gas emissions, especially carbon dioxide (CO2). This research proposes an analysis on the EPFL campus of all the potential reductions of CO2 emissions: energy refurbishment ...

IOP science2019

Techno-Economic Optimization of CO2-to-Methanol with Solid-Oxide Electrolyzer

Jan Van Herle, François Maréchal, Ligang Wang, Hanfei Zhang

Carbon capture and utilization are promising to tackle fossil-fuel depletion and climate change. CO2 hydrogenation can synthesize various chemicals and fuels, such as methanol, formic acid, urea, and methane. CO2-to-methanol integrated with solid-oxide ele ...

2019

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Igor Stolichnov, Mihai Adrian Ionescu, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

2018

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci, Chiara Rossi

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Federico Faccio, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Royal Society of Chemistry2017

A charge carrier transport model for donor-acceptor blend layers

Wolfgang Richard Tress

Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device p ...

American Institute of Physics2015