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Denis Martin

Cette personne n’est plus à l’EPFL

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Publications associées (34)

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Marcel Py, Pierre Stadelmann, Denis Martin, Nicolas Grandjean, Marcus Gonschorek, Anas Mouti, Marco Malinverni

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

2010

Study of the epitaxial relationships between III-nitrides and M-plane sapphire

Denis Martin, Nicolas Grandjean, Tiankai Zhu

GaN films epitaxially-grown on M-sapphire may have different orientations, either nonpolar and semipolar. In this paper, the different epitaxial relationships are investigated in details thanks to transmission electron microscopy. It is shown that these re ...

2010

AlGaN/GaN HEMT on (111) single crystalline diamond

Denis Martin, Nicolas Grandjean

AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and ...

2010

Sputtering of (001)AlN thin films: Control of polarity by a seed layer

Jean-François Carlin, Paul Muralt, Denis Martin, Jürgen Brugger, Nicolas Grandjean, Evgeny Milyutin, Andreea Veronica Savu, Scott Harada

The authors report on the ability to control the polarity of sputter deposited AlN001 thin ﬁlms using seed layers. Reactive sputter deposition leads to N-polarity on any substrate hitherto applied, i.e., Si111, sapphire, SiO2, and polycrystalline metals su ...

American Vacuum Society2010

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Tiankai Zhu, Pierre Michel Corfdir

We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons ...

American Institute of Physics2010

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Denis Martin, Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

2009

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Denis Martin, Nicolas Grandjean, Tiankai Zhu

M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms roughness similar to 2.0 nm (5 ...

2009

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

Denis Martin, Nicolas Grandjean, Tiankai Zhu

The in-plane polarities of GaN and ZnO non-polar films deposited on r- and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in ...

2009

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

AIP American Institute of Physics2009

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Jacques Levrat, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Denis Martin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Tiankai Zhu

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

2008

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Denis Martin, Nicolas Grandjean, Raphaël Butté, Tiankai Zhu

Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...

2007

Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

Marc Ilegems, Denis Martin, Nicolas Grandjean

The reduction of the tensile stress contained in GaN layers grown oil sapphire by metalorganic vapor phase epitaxy (MOVPE) is achieved using a low density of initial GaN crystallites. The template layers exhibit a significant reduction in dislocation densi ...

2006

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

Marc Ilegems, Denis Martin, Nicolas Grandjean, Raphaël Butté

The growth by hydride vapor phase epitaxy (HVPE) of high quality thin GaN layers (d=8 mu m) on c-plane sapphire substrates with dislocation densities lower than 2x10(8) cm(-2) is demonstrated using a two-step process similar to that of metal organic vapor ...

2006

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