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Raphaël Butté

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Publications associées (105)

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Yi Wang

We present a methodology to quantify polarization and electron affinity changes at interfaces by combining scanning tunneling spectroscopy, off-axis electron holography in transmission electron microscopy (TEM), and self-consistent calculations of the elec ...

AMER PHYSICAL SOC2020

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...

IOP PUBLISHING LTD2020

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Hua Zhang, Ching-Wen Shih

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

2019

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

AMER INST PHYSICS2019

Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

Since the early 1960s, alloys are commonly grouped into two classes that feature either bound states in the band gap (I) or additional, nondiscrete band states (II). Consequently, one can observe either excitons bound to isoelectronic impurities or the typ ...

American Physical Society2019

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Hua Zhang, Ching-Wen Shih

We report broad bandwidth blue superluminescent light-emitting diodes (SLEDs) based on a short-cavity active region. The dependencies of amplified spontaneous emission (ASE) output power and gain bandwidth on cavity length were investigated in devices whos ...

2019

Probing alloy formation using different excitonic species: The particular case of InGaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

Since the 1960s, alloys are grouped into two classes, featuring bound states in the bandgap (I - GaP:N, ZnTe:O, etc.) or additional, non-discrete, band states (II - SiGe, GaAsP, InGaAs, etc.). Therefore, one can observe either a rich and informative zoo of ...

IEEE2019

A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Noelia Vico Triviño, Ian Michael Rousseau, Gordon Jens Callsen

Nature Research2018

Excited states of neutral donor bound excitons in GaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

2018

Impact of surface morphology on the properties of light emission in InGaN epilayers

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Lise Lahourcade

2018

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Ian Michael Rousseau, Gordon Jens Callsen

2018

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Marlene Glauser, Georg Rossbach, Lise Lahourcade, Gordon Jens Callsen

AIP American Institute of Physics2018

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Gwénolé Jean Jacopin, Wei Liu

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

2018

Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau, Irene Sánchez Arribas, Kanako Shojiki

The mechanisms contributing to experimental quality factors of shortwavelength (lambda = 440-480 nm) III-nitride on silicon one-dimensional photonic crystal cavities were quantified. Fluctuations in fundamental and first-order cavity mode wavelength and qu ...

Amer Physical Soc2017

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Benoît Marie Joseph Deveaud, Nicolas Grandjean, Raphaël Butté, Mehran Shahmohammadi, Georg Rossbach, Lise Lahourcade, Gwénolé Jean Jacopin, Wei Liu

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

Amer Physical Soc2017

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Gwénolé Jean Jacopin

The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual physical mechanism responsible for it is still unclear. We thus conduct a sys ...

American Institute of Physics2017

Propagating Polaritons in III-Nitride Slab Waveguides

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Joachim Armand Simonne Ciers

We report on III-nitride waveguides with c-plane GaN/(Al,Ga)N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overla ...

American Physical Society (APS)2017

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Gediminas Liaugaudas

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

Amer Inst Physics2016

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...

Spie-Int Soc Optical Engineering2016

Small-signal transient response and turn-on delay of polariton laser diodes

Raphaël Butté

We present a theoretical description of the small-signal transient response of polariton laser diodes (pol-LDs) based on simplified coupled rate equations describing the exciton reservoir and the ground-state polariton populations. The analytic expressions ...

Iop Publishing Ltd2016

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