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Eric Feltin

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Publications associées (86)

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Massimo Gurioli

A detailed experimental investigation of the phonon-assisted emission in a high-quality c-plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica ...

2010

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Anas Mouti

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexago ...

AIP American Institute of Physics2010

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

One-hundred-nanometer-gate (Al, In) N/GaN highelectron- mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V-GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2010

Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Cambridge, Cambridge University Press2010

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...

Institute of Electrical and Electronics Engineers2009

Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report the observation of well-resolved A and B excitonic resonances in the reflectivity spectra of a wedged GaN/AlGaN quantum well (QW) with 5% Al content in the barriers for different well thicknesses. For the thicker well cases, the energy splitting ...

2009

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Marcus Gonschorek

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

2009

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Jean-François Carlin, Nicolas Grandjean, Eric Feltin

We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...

Institute of Electrical and Electronics Engineers2009

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

2009

Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We report on the properties of III-nitride based microcavities (MCs) operating in the strong coupling regime (SCR) up to room temperature. We first discuss why this class of materials is well suited to investigate the physics of cavity polaritons, which ar ...

Wiley-Blackwell2009

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Jean-François Carlin, Alexei Altoukhov, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

2009

Phase diagram of a polariton laser from cryogenic to room temperature

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

The signature of the strong-coupling regime is unambiguously evidenced in a GaN-based microcavity (MC) above the polariton lasing threshold P-thr at room temperature through the observation of the upper polariton branch. The MC system exhibits a renormaliz ...

2009

Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek, Anas Mouti

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...

2009

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Jean-François Carlin, Alexei Altoukhov, Gatien Cosendey, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

Ieee2009

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

Ieee2009

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Jean-François Carlin, Alexei Altoukhov, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

2009

Broadband blue superluminescent light-emitting diodes based on GaN

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...

2008

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