Etienne François Olivier Giraud

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Publications associées (5)

Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

Jean-François Carlin, Nicolas Grandjean, Etienne François Olivier Giraud

2018

Optical and transport properties of GaN/(Al,Ga)N heterostructures in prospect of infrared unipolar devices

Etienne François Olivier Giraud

Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their potential applications in intersubband (ISB) devices. If these materials are nowadays famous, particularly for having revolutionized domestic lighting thanks ...

EPFL2015

Interaction between meta-materials and shallow donors in bulk GaN at THz frequency

Jérôme Faist, Nicolas Grandjean, Etienne François Olivier Giraud

We report the coupling and interaction between shallow donors and microcavities in bulk GaN at THz frequencies. At 4K, the shallow donors lead to an absorption at 23.5 meV (5.7 THz) under optical pumping above the bandgap of GaN. The microcavities are base ...

Optical Soc Amer2014

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Daniel Marti, Jean-François Carlin, Nicolas Grandjean, Etienne François Olivier Giraud, Marco Malinverni, Lorenzo Lugani

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Amer Inst Physics2014

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Pierre Michel Corfdir, Etienne François Olivier Giraud, Mehran Shahmohammadi

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

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