Publications de Cem Alper | EPFL Graph Search

Sensing device for sensing minor charge variations

Mihai Adrian Ionescu, Cem Alper, Teodor Rosca

A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate. ...

2019

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

2018

Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

2018

Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

AIP American Institute of Physics2018

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Arnab Biswas, Cem Alper, Emanuele Andrea Casu, Teodor Rosca, Anna Krammer, Qun Zhao

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Research2017

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Mihai Adrian Ionescu, Florin Udrea, Arnab Biswas, Cem Alper

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...

Institute of Electrical and Electronics Engineers2017

Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogous ...

Amer Inst Physics2016

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Arnab Biswas, Cem Alper, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the ste ...

IEEE2016

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In conventional planar EHBTFETs, the interband tunneling phenomena responsible for the drive current takes place vertically in the section of the channel where top and bottom gates overlap. As a result, the horizontal extent of this overlapping between gat ...

Ieee2016

Semiconductor tunneling device

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length exten ...

2016

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, S ...

Institute of Electrical and Electronics Engineers2016

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of the Schrodinger and Poisson equations, using the Finite Element Method followed by tunneling current (direct and phonon assisted) calculation in post-processing. ...

Elsevier2015

Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

We investigate the effect of pseudo-bilayer configurations at low operating voltages (

American Institute of Physics2015

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In this comment we demonstrate that the inclusion of field--induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron--hole bilayer tunnel field-effect transistor ...

Institute of Physics2015

Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

American Institute of Physics2015

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

We investigate the effect of asymmetric configurations on the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) and assess the improvement that they provide in terms of boosting the typically very low ON current levels ...

Institute of Electrical and Electronics Engineers2015

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...

American Institute of Physics2014

Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Cem Alper

In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson’s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the c ...

IEEE2014