Publications de Giovanni Santoruvo

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Catherine Erine

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

Institute of Electrical and Electronics Engineers2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Nanoplasma-enabled picosecond switches for ultrafast electronics

Elison de Nazareth Matioli, Giovanni Santoruvo, Minghua Zhu, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

The broad applications of ultrawide-band signals and terahertz waves in quantum measurements, imaging and sensing techniques, advanced biological treatments, and very-high-data-rate communications have drawn extensive attention to ultrafast electronics. In ...

2020

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Elison de Nazareth Matioli, Giovanni Santoruvo, Mohammad Samizadeh Nikooytabalvandani

Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricat ...

2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Taifang Wang, Luca Nela

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Giovanni Santoruvo, Armin Jafari, Catherine Erine, Mohammad Samizadeh Nikooytabalvandani

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

Institute of Electrical and Electronics Engineers2019

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

Institute of Electrical and Electronics Engineers2017