Publications associées à Procédé planar

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Generation of entangled photon pairs from a silicon bichromatic photonic crystal cavity

Matteo Galli, Marco Clementi, Thanavorn Poempool

Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as int ...

Aip Publishing2024

In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics

Matteo Cucchi, Eleni Stavrinidou

Next-generation implantable computational devices require long-term-stable electronic components capable of operating in, and interacting with, electrolytic surroundings without being damaged. Organic electrochemical transistors (OECTs) emerged as fitting ...

Wiley-V C H Verlag Gmbh2023

Electronic transport in graphene nanoribbon junctions

Kristians Cernevics

Graphene nanoribbons (GNRs) - one-dimensional strips of graphene - share many of the exciting properties of graphene, such as ballistic transport over micron dimensions, strength and flexibility, but more importantly, they exhibit a tunable band gap that d ...

EPFL2022

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...

Institute of Electrical and Electronics Engineers2021

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Plasma-enhanced atomic layer deposition of nickel nanotubes with low resistivity and coherent magnetization dynamics for 3D spintronics

Anna Fontcuberta i Morral, Dirk Grundler, Julien Gay, Simon Robert Escobar Steinvall, Maria Carmen Giordano

We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes by using nickelocene as a precursor, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. The optimized ALD pul ...

2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Crystal Phase Tuning in Planar Films of III-V Semiconductors

Anna Fontcuberta i Morral, Kirsten Emilie Moselund, Nicolas Tappy

We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We ...

IEEE2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Advanced Diamond Microfabrication for Microoptics and Photonics

Marcell Kristof Kiss

Diamond is an exceptional material - hard, stiff, transparent, which makes it ideal for the fabrication of optical and mechanical systems that take advantage of these properties. Diamond is not only "better", but it offers the possibility of integrating br ...

EPFL2019

Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Davide Sacchetto, Yusuf Leblebici, Oliver Peric, Zuhal Tasdemir

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Impedance Spectroscopy for Single Cell Analysis and Dispensing

David Vincent Bonzon

Flow cytometry is an essential tool in biology and medicine with applications in immunodeficiency diagnostic, immunosurveillence, organ transplantation in addition to its basic research usage. Before the widespread use of the Fluorescent-Activated Cell Sor ...

EPFL2017

Bio-inspired Tensegrity Soft Modular Robots

Dario Floreano, Stefano Mintchev, Jun Shintake, Davide Zappetti

In this paper, we introduce a design principle to develop novel soft modular robots based on tensegrity structures and inspired by the cytoskeleton of living cells. We describe a novel strategy to realize tensegrity structures using planar manufacturing te ...

Springer2017

Array imaging system for lithography

Toralf Scharf, Wilfried Noell, Raoul Kirner

We present an integrated array imaging system based on a stack of microlens arrays. The microlens arrays are manufactured by melting resist and reactive ion etching (RIE) technology on 8'' wafers (fused silica) and mounted by wafer-level packaging (WLP)(1) ...

Spie-Int Soc Optical Engineering2016

Excitation of resonant plasmonic cavities by integrated waveguides for sensing applications

Gaël David Osowiecki

Optical sensors represent a large growing market which is nowadays focusing onto advancement in mobile technology. Innovations in the field of optical sensors are mostly driven by the technological advancements in the domain of micro & nanofabrication. One ...

EPFL2016

Solar cell

Christophe Ballif

The present invention relates to a solar cell comprising a semiconductor wafer (1), an emitter formed by at least one emitter region (20) which comprises at least a first layer (3) of a first conductivity type and a first contact layer (4) allowing a carri ...

2014

In-plane fabrication of insulated gold-tip probes for electrochemical and force spectroscopy molecular experiments

Nico de Rooij, Terunobu Akiyama, Sebastian Gautsch, Peter Van der Wal, Yexian Wu

A new and versatile fabrication process of insulated gold tip probes for atomic force microscopy (AFM) is presented by Wu et al. (In-plane fabricated insulated gold-tip probe for electrochemical and molecular experiments, in: 2013 IEEE 26th International C ...

Elsevier2014