Recherche

Afficher tous les résultats pour

Accueil

Personne

Didier Bouvet

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (58)

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

Didier Bouvet, László Forró, Mihai Adrian Ionescu, Arnaud Magrez, Donatello Acquaviva, Anupama Arun, Rita Smajda

We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers wi ...

American Institute of Physics2010

The high-mobility bended n-channel silicon nanowire transistor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Effect of electrode potential on the tribocorrosion of tungsten

Didier Bouvet, Michel Declercq, Stefano Mischler, Jelena Stojadinovic

The tribocorrosion behavior of tungsten sliding against an alumina ball was evaluated in sulfuric acid under applied electrode potential. Surface chemistry of worn and unworn surfaces was evaluated using XPS and AES. Quasi-potentiostatic polarization curve ...

2009

Semiconductor device and method of manufacturing a semiconductor device

Didier Bouvet, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, wh ...

2009

Electrochemically controlled wear transitions in the tribocorrosion of ruthenium

Didier Bouvet, Michel Declercq, Stefano Mischler, Jelena Stojadinovic

This work presents an investigation of the tribocorrosion of ruthenium in sulphuric acid solutions. The study was focused on the effect of the electrode potential on wear of ruthenium during sliding against an inert alumina ball in a reciprocating sliding ...

2009

Investigation of oxidation-induced strain in a top-down Si nanowire platform

Didier Bouvet, Mihai Adrian Ionescu, Mohammad Najmzadeh

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxid ...

Elsevier2009

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Didier Bouvet, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics

Didier Bouvet, Mihai Adrian Ionescu, Kirsten Emilie Moselund

In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the ID(V GS) device characteristics are less than 10 mV/dec ...

Institute of Electrical and Electronics Engineers2008

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Didier Bouvet, Mihai Adrian Ionescu, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

2008

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Giovanni Antonio Salvatore

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

2008

Prospects for logic-on-a-wire

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

2008

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

2008

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuit ...

2008

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS ...

2008

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore

This work experimentally demonstrates, for the first time, that by integrating a thin ferroelectric layer into a gate stack of a standard MOS transistor one, it is possible to overcome the 60 mV/decade subthreshold swing limit at room temperature of MOSFET ...

2008

Fabrication of silicon nano wires and gate-all-around MOS devices

Didier Bouvet, Kirsten Emilie Moselund

The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall pr ...

2007

High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates

Didier Bouvet, Mihai Adrian Ionescu, Cyrille Hibert, Christine Leroy

2007

Page 2 sur 3