Publications de Marco Rossetti

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Denis Martin, Nicolas Grandjean, Marco Rossetti, Antonino Francesco Castiglia, Marco Malinverni, Camille Haller

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

Refractive Index Dynamics and Linewidth Enhancement Factor in p-Doped InAs-GaAs Quantum-Dot Amplifiers

Marco Rossetti

Using a pump-probe differential transmission experiment in heterodyne detection, we measured the refractive index dynamics at the ground-state excitonic transition in electrically pumped InAs/GaAs quantum-dot amplifiers emitting near 1.3 mu m at room tempe ...

2009

Polarization dependence of electroluminescence from closely-stacked and columnar quantum dots

Marco Rossetti, Philipp Ridha

Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advant ...

Springer US2008

Modeling of gain and phase dynamics in quantum dot amplifiers

Benoît Marie Joseph Deveaud, Marco Rossetti, Pablo Moreno

By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semiconductor optical amplifier and the appearance of different decay times observed in pump and probe experiments. The ultrafast hole relaxation leads to a fir ...

Springer US2008

Controlling the aspect ratio of quantum dots: From columnar dots to quantum dots

Marco Rossetti, Philipp Ridha

We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrat ...

2008

Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

Marco Rossetti

Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear ele ...

2008

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...

EPFL2007