Publications de Antonino Francesco Castiglia

GaN-based superluminescent diodes with long lifetime

Jean-François Carlin, Nicolas Grandjean, Antonino Francesco Castiglia

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their r ...

Spie-Int Soc Optical Engineering2016

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Denis Martin, Nicolas Grandjean, Marco Rossetti, Antonino Francesco Castiglia, Marco Malinverni, Camille Haller

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Antonino Francesco Castiglia, Georg Rossbach

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

American Institute of Physics2012

Static and dynamic properties of multi-section InGaN-based laser diodes

Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Nicolas Grandjean, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

Mg doping for p-type AlInN lattice-matched to GaN

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Antonino Francesco Castiglia

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

American Institute of Physics2012

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Jean-François Carlin, Romuald Houdré, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Kirill Atlasov, Antonino Francesco Castiglia, Ulagalandha Perumal Dharanipathy, Noelia Vico Triviño, Georg Rossbach

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

American Institute of Physics2012

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Jean-François Carlin, Nicolas Grandjean, Antonino Francesco Castiglia

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

AIP American Institute of Physics2011

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Jean-François Carlin, Nicolas Grandjean, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the ...

AIP American Institute of Physics2010

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...

AIP American Institute of Physics2010

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Jean-François Carlin, Alexei Altoukhov, Gatien Cosendey, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

Ieee2009

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Jean-François Carlin, Alexei Altoukhov, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

2009

Broadband blue superluminescent light-emitting diodes based on GaN

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Jean-François Carlin, Alexei Altoukhov, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

2009

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

Ieee2009

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Denis Martin, Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

2009

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Jean-François Carlin, Alexei Altoukhov, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Antonino Francesco Castiglia

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

2008