Publications de Giovanni Antonio Salvatore

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper, we report the basic design conditions and the experimental confirmation of a temperature dependent negative capacitance (NC) effect in a ferroelectric field-effect-transistor (Fe-FET). We find that the internal voltage amplification peaks of ...

American Institute of Physics2012

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Luca De Michielis, Alexandru Rusu, Nilay Dagtekin, Ji Cao, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

2011

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

Tunnel FETs (TFETs) have attracted much interest in the last decade for their potential to be used as small slope switches, suitable for future logic circuits operating with a supply voltage smaller than 0.5 V and for reduced Ioff levels. It has been shown ...

IEEE2010

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Livio Lattanzio

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Didier Bouvet, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Giovanni Antonio Salvatore

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

2008

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

Didier Bouvet, Mihai Adrian Ionescu, Giovanni Antonio Salvatore

This work experimentally demonstrates, for the first time, that by integrating a thin ferroelectric layer into a gate stack of a standard MOS transistor one, it is possible to overcome the 60 mV/decade subthreshold swing limit at room temperature of MOSFET ...

2008