Publications de Luca Selmi | EPFL Graph Search

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Luca Selmi, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons

Luca Selmi, Enrico Accastelli, Carlotta Guiducci, Thomas Ernst, Paolo Scarbolo

We present a quantitative numerical analysis of dielectric microbead detection experiments with nanoribbons operated in the AC small signal regime. To this purpose, a comprehensive model of nanoribbon operation in electrolyte environment and with DC/AC sig ...

Ieee2016

Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

Luca Selmi, Enrico Accastelli, Carlotta Guiducci, Thomas Ernst, Paolo Scarbolo, Pierpaolo Palestri

The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-g ...

Mdpi Ag2016

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Luca Selmi, Cem Alper, Pierpaolo Palestri

The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of cur ...

Ieee-Inst Electrical Electronics Engineers Inc2013

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Luca Selmi, Arnab Biswas, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

Corner Effect and Local Volume Inversion in SiNW FETs

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Luca Selmi

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

Institute of Electrical and Electronics Engineers2011

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Luca Selmi, Pierpaolo Palestri

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

IEEE2011

Tunneling path impact on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Luca Selmi, Pierpaolo Palestri

In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of dif ...

IEEE2011

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Luca Selmi, Pierpaolo Palestri

In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights rangi ...

Elsevier2011