Lise Lahourcade

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Publications associées (5)

Impact of surface morphology on the properties of light emission in InGaN epilayers

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Lise Lahourcade

2018

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Marlene Glauser, Georg Rossbach, Lise Lahourcade, Gordon Jens Callsen

AIP American Institute of Physics2018

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Benoît Marie Joseph Deveaud, Nicolas Grandjean, Raphaël Butté, Mehran Shahmohammadi, Georg Rossbach, Lise Lahourcade, Gwénolé Jean Jacopin, Wei Liu

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

Amer Physical Soc2017

Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth

Denis Martin, Nicolas Grandjean, Nils Asmus Kristian Kaufmann, Lise Lahourcade

We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwobel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which stron ...

Elsevier Science Bv2016

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

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