Publications de Nilay Dagtekin

One Transistor Active Pixel Sensor with Tunnel FET

A tunneling field effect transistor for light detection, including a p-type region connected to a source terminal, a n-type region connected to a drain terminal, an intrinsic region located between the p-type region and the n-type region to form a P-I junc ...

2016

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Nilay Dagtekin, Arnab Biswas

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

Semiconductor tunneling device

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length exten ...

2016

Practical Applications of Tunnel Field Effect Transistors

Nilay Dagtekin

Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...

EPFL2015

Compact Modeling of Homojunction Tunnel FETs

Mihai Adrian Ionescu, Wladyslaw Grabinski, Luca De Michielis, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos, Cem Alper

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supp ...

IEEE2014

Partially gated lateral tunnel field effect transistor for optical applications

Mihai Adrian Ionescu, Nilay Dagtekin

Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output r ...

Amer Inst Physics2014

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Mihai Adrian Ionescu, Nilay Dagtekin

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

IEEE2014

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Mihai Adrian Ionescu, Wladyslaw Grabinski, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos

In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices ...

American Institute of Physics2014

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Luca Selmi, Arnab Biswas, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body

Mihai Adrian Ionescu, Wladyslaw Grabinski, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos

IEEE2013

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio

Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving subthermal switching slopes and extremely low leakage currents. Recently, a promising concept has been proposed: the electron-hole bilayer TFET (EHBTFET), which exploit ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

IEEE2012

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Luca De Michielis, Alexandru Rusu, Nilay Dagtekin, Ji Cao, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011

ARMADILLO: A Multi-purpose Cryptographic Primitive Dedicated to Hardware

Stéphane Badel, Serge Vaudenay, Khaled Ouafi, Nilay Dagtekin, Pouyan Sepehrdad, Jorge Nakahara, Petr Susil

This paper describes and analyzes the security of a general-purpose cryptographic function design, with application in RFID tags and sensor networks. Based on these analyzes, we suggest minimum parameter values for the main components of this cryptographic ...

Springer2010